HN डेटा पत्रक
| PartNo | Manufacturer | विवरण |
|---|---|---|
| HN-A2970-FREQ | NEL[Nel Frequency Controls,inc] | CRYSTAL CLOCK OSCILLATORS |
| HN-A2971-FREQ | NEL[Nel Frequency Controls,inc] | CRYSTAL CLOCK OSCILLATORS |
| HN-A2977-FREQ | NEL[Nel Frequency Controls,inc] | CRYSTAL CLOCK OSCILLATORS |
| HN-A2979-FREQ | NEL[Nel Frequency Controls,inc] | CRYSTAL CLOCK OSCILLATORS |
| HN-A297A-FREQ | NEL[Nel Frequency Controls,inc] | CRYSTAL CLOCK OSCILLATORS |
| HN-A297B-FREQ | NEL[Nel Frequency Controls,inc] | CRYSTAL CLOCK OSCILLATORS |
| HN-A297C-FREQ | NEL[Nel Frequency Controls,inc] | CRYSTAL CLOCK OSCILLATORS |
| HN/2N3903 | Honey-Technology | 60 V, NPN silicon expitaxial planar transistor |
| HN/2N3905 | Honey-Technology | 40 V, PNP silicon expitaxial planar transistor |
| HN/2N3906 | Honey-Technology | 40 V, PNP silicon expitaxial planar transistor |
| HN/2N4401 | Honey-Technology | 60 V, NPN silicon expitaxial transistor |
| HN/2N4402 | Honey-Technology | 40 V, PNP silicon expitaxial transistor |
| HN/2N4403 | Honey-Technology | 40 V, PNP silicon expitaxial transistor |
| HN/2N5400 | Honey-Technology | 120 V, PNP silicon expitaxial planar transistor |
| HN/2N5401 | Honey-Technology | 150 V, PNP silicon expitaxial planar transistor |
| HN/2N5550 | Honey-Technology | 140 V, NPN silicon expitaxial planar transistor |
| HN/2N5551 | Honey-Technology | 160 V, NPN silicon expitaxial planar transistor |
| HN/BC327 | Honey-Technology | 50 V, PNP silicon expitaxial planar transistor |
| HN/BC328 | Honey-Technology | 30 V, PNP silicon expitaxial planar transistor |
| HN/BC337 | Honey-Technology | 50 V, NPN silicon expitaxial planar transistor |
| HN/BC338 | Honey-Technology | 30 V, NPN silicon expitaxial planar transistor |
| HN/BC546 | Honey-Technology | 80 V, NPN silicon expitaxial planar transistor |
| HN/BC547 | Honey-Technology | 50 V, NPN silicon expitaxial planar transistor |
| HN/BC549 | Honey-Technology | 30 V, NPN silicon expitaxial planar transistor |
| HN/BC556 | Honey-Technology | 80 V, PNP silicon expitaxial planar transistor |
| HN/BC557 | Honey-Technology | 50 V, PNP silicon expitaxial planar transistor |
| HN/BC559 | Honey-Technology | 30 V, PNP silicon expitaxial planar transistor |
| HN16 | ETC | Manufactured to type RM Standards |
| HN16B-SERIES | Interface IC | |
| HN16R-SERIES | Interface IC | |
| HN16S-SERIES | Interface IC | |
| HN1A01F | Toshiba Semiconductor | EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1A01F07 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio-Frequency General-Purpose Amplifier |
| HN1A01FE | Toshiba | Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications |
| HN1A01FGR | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1A01FU | Toshiba Semiconductor | EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1A01FU07 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications |
| HN1A01FUGR | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1A01FUY | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1A01FU_07 | Toshiba Semiconductor | Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1A01FY | TRANSISTOR | BJT | PAIR | PNP | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1A01F_07 | Toshiba Semiconductor | Silicon PNP Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier |
| HN1A02F | Toshiba Semiconductor | Silicon PNP Epitaxial Type (PCT Process) Audio Frequency Power Amplifier Applications |
| HN1A07F | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency Small Power Amplifier Applications |
| HN1A26FS | Toshiba Semiconductor | Silicon Epitaxial Type Process) Frequency General-Purpose Amplifier Applications |
| HN1B01F | Toshiba Semiconductor | EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1B01F07 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio-Frequency General-Purpose Amplifier Applications |
| HN1B01FDW1T1 | Semiconductor | Complementary Dual General Purpose Amplifier Transistor Surface Mount |
| HN1B01FDW1T1/D | Complementary Dual General Purpose Amplifier Transistor | |
| HN1B01FDW1T1G | Semiconductor | Complementary Dual General Purpose Amplifier Transistor Surface Mount |
| HN1B01FGR | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1B01FU | Toshiba Semiconductor | EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1B01FU07 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications |
| HN1B01FUGR | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1B01FUY | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1B01FU_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1B01FY | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1B01F_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications |
| HN1B04F | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications |
| HN1B04F07 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications |
| HN1B04FE | Toshiba Semiconductor | Audio Frequency General Purpose Amplifier Applications |
| HN1B04FU | Toshiba Semiconductor | EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1B04FUGR | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1B04FUY | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1B04F_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1B26FS | Toshiba Semiconductor | General-Purpose Amplifier Applications |
| HN1C01F | Toshiba Semiconductor | EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1C01F07 | Toshiba Semiconductor | Audio-Frequency General-Purpose Amplifier Applications |
| HN1C01FE | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications |
| HN1C01FGR | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1C01FU | Toshiba Semiconductor | EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
| HN1C01FU07 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications |
| HN1C01FUGR | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1C01FUY | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1C01FU_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
| HN1C01FY | TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP | |
| HN1C01F_07 | Toshiba Semiconductor | Audio-Frequency General-Purpose Amplifier Applications |
| HN1C03F | Toshiba Semiconductor | EPITAXIAL TYPE MUTING SWITCHING APPLICATIONS) |
| HN1C03F07 | Toshiba Semiconductor | Silicon Epitaxial Type Process) Muting Switching Applications |
| HN1C03FA | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP | |
| HN1C03FB | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP | |
| HN1C03FU | Toshiba Semiconductor | EPITAXIAL TYPE MUTING SWITCHING APPLICATIONS) |
| HN1C03FUA | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP | |
| HN1C03FUB | TRANSISTOR | BJT | PAIR | NPN | 20V V(BR)CEO | 300MA I(C) | TSOP | |
| HN1C03F_07 | Toshiba Semiconductor | Silicon NPN Epitaxial Type (PCT Process) For Muting And Switching Applications |
| HN1D01F | Toshiba Semiconductor | DIODE (ULTRAL HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D01F07 | Toshiba Semiconductor | Silicon Epitaxial Planar Type Ultra-High-Speed Switching Applications |
| HN1D01FE | Toshiba Semiconductor | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| HN1D01FU | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D01FU07 | Toshiba Semiconductor | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| HN1D01FU_07 | Toshiba Semiconductor | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| HN1D01F_07 | Toshiba Semiconductor | Silicon Epitaxial Planar Type Ultra-High-Speed Switching Applications |
| HN1D02F | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D02F07 | Toshiba Semiconductor | Ultra-High-Speed Switching Applications |
| HN1D02FE | Toshiba Semiconductor | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| HN1D02FU | Toshiba Semiconductor | DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) |
| HN1D02FU07 | Toshiba Semiconductor | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| HN1D02FU_07 | Toshiba Semiconductor | Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
| HN1D02F_07 | Toshiba Semiconductor | Ultra-High-Speed Switching Applications |
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